(China (Mainland))
Product Summary
The SKM111RZR is designed as one kind of low loss power MOSFET module.
Parametrics
Absolute maximum ratings: (1)VDS: 100V; (2)ID: 200(150) A at Ts=25(80) ℃; (3)IDM: 600 A at 1 ms; (4)VGS: ± 20 V; (5)Tvj, (Tstg): -40 to +150(125) ℃; (6)Visol: 2500 V at AC, 1 min.
Features
Features: (1)avalanche characteristic;(2)N-channel, enhancement mode;(3)short connections and built-in gate resistors to suppress internal oscillations even in critical applications;(4)isolated copper baseplate;(5)all electrical connections on top for easy busbaring;(6)large clearances (10 mm) and creepage distances (20 mm);(7)UL recognized, file no. E63532.
Diagrams
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 SKM100GAL123D |
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Data Sheet |
Negotiable |
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SKM100GB124D |
Other |
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Data Sheet |
Negotiable |
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SKM100GB125DN |
Other |
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Data Sheet |
Negotiable |
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SKM100GB173D |
Other |
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Data Sheet |
Negotiable |
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SKM111AR |
Other |
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Data Sheet |
Negotiable |
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SKM121AR |
Other |
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Data Sheet |
Negotiable |
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